The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Jun. 13, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wen-Chih Chiou, Miaoli County, TW;

Yung-Chi Lin, New Taipei, TW;

Yen-Ming Chen, Hsin-Chu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 24/96 (2013.01); H01L 21/4857 (2013.01); H01L 21/561 (2013.01); H01L 2224/951 (2013.01);
Abstract

A method includes attaching a wafer to a wafer chuck having a curved surface. The method further includes placing a device die on the wafer, such that a first dielectric layer of the device die is in contact with a second dielectric layer of the wafer, and performing an annealing process to bond the first dielectric layer to the second dielectric layer. The method further includes encapsulating the device die with an encapsulating material, forming redistribution lines overlapping the encapsulating material and the device die, and sawing the encapsulating material to form a plurality of packages.


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