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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12374562 B1

PDFFull Text
Date of Patent:
Jul. 29, 2025

Filed:

Aug. 10, 2022

Wafer shape control for w2w bonding

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Anthony R. Schepis, Averill Park, NY (US);

Andrew Weloth, Albany, NY (US);

David C. Conklin, Saratoga Springs, NY (US);

Anton J. Devilliers, Clifton Park, NY (US);

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

John P Dulka

Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01L 21/68 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/56 (2013.01); H01L 21/0226 (2013.01); H01L 21/67063 (2013.01); H01L 21/67092 (2013.01); H01L 21/67098 (2013.01); H01L 21/67109 (2013.01); H01L 21/67225 (2013.01); H01L 21/68 (2013.01); H01L 22/20 (2013.01); H01L 22/34 (2013.01); H01L 23/3171 (2013.01); H01L 24/80 (2013.01); H01L 23/291 (2013.01); H01L 24/08 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80007 (2013.01); H01L 2224/80011 (2013.01); H01L 2224/80013 (2013.01);
Abstract

A method, for bonding a first wafer to a second wafer, includes generating a first modification map based on wafer shape data of the first wafer and the second wafer. The first modification map defines adjustments to internal stresses of the first wafer. A first wafer shape of the first wafer is modified by forming a first stressor film on the first wafer based on the first modification map. The first wafer is aligned with the second wafer after the modifying. The first wafer is bonded to the second wafer.

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