The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Jun. 28, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Hsiu-Wen Hsueh, Taichung, TW;

Chii-Ping Chen, Hsinchu, TW;

Neng-Jye Yang, Hsinchu, TW;

Ya-Lien Lee, Baoshan Township, TW;

An-Jiao Fu, Taipei, TW;

Ya-Ching Tseng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 23/528 (2013.01); H01L 23/53228 (2013.01);
Abstract

Some embodiments relate to a semiconductor structure including a dielectric layer over a substrate. A conductive body is disposed within the dielectric layer. The conductive body has a bottom surface continuously extending between opposing sidewalls. A first liner layer is disposed between the conductive body and the dielectric layer. The first liner layer extends along the opposing sidewalls of the conductive body. The first liner layer is laterally offset from a central region of the bottom surface of the conductive body by a non-zero distance.


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