The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
May. 10, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device and a method of forming the same are provided. The method includes forming a fin extending from a substrate. A dummy gate is formed over the fin. The dummy gate extends along sidewalls and a top surface of the fin. The dummy gate is removed to form a recess. A replacement gate is formed in the recess. Forming the replacement gate includes forming an interfacial layer along sidewalls and a bottom of the recess. A dipole layer is formed over the interfacial layer. The dipole layer includes metal atoms. Fluorine atoms are incorporated in the dipole layer. The fluorine atoms and the metal atoms are driven from the dipole layer into the interfacial layer. The dipole layer is removed.