The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Apr. 28, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Yen-Hao Chen, Taichung, TW;

Han-Hsiang Huang, Hsinchu, TW;

Yu-Sheng Lin, Zhubei, TW;

Chien-Sheng Chen, Hsinchu, TW;

Shin-Puu Jeng, Po-Shan Village, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 23/49811 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 25/0652 (2013.01); H01L 23/49833 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/05005 (2013.01); H01L 2224/05011 (2013.01); H01L 2224/05013 (2013.01); H01L 2224/05014 (2013.01); H01L 2224/05015 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05551 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/06131 (2013.01); H01L 2224/06133 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/95001 (2013.01); H01L 2924/1432 (2013.01); H01L 2924/1437 (2013.01); H01L 2924/182 (2013.01); H01L 2924/186 (2013.01);
Abstract

A semiconductor structure includes a semiconductor die containing an array of first bonding structures. Each of the first bonding structures includes a first metal pad located within a dielectric material layer and a basin-shaped underbump metallization (UBM) pad located within a respective opening in a passivation dielectric layer and contacting the first metal pad. An interposer includes an array of second bonding structures, wherein each of the second bonding structures includes an underbump metallization (UBM) pillar having a respective cylindrical shape. The semiconductor die is bonded to the interposer through an array of solder material portions that are bonded to a respective one of the first-type bonding structures and to a respective one of the second-type bonding structures.


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