The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Jan. 23, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chia-Hsi Wang, Changhua County, TW;

Yen-Yu Chen, Taichung, TW;

Jen-Hao Chien, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/54 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01); C23C 14/52 (2006.01); G01N 23/2273 (2018.01); H01J 37/34 (2006.01); H10N 50/10 (2023.01);
U.S. Cl.
CPC ...
C23C 14/548 (2013.01); C23C 14/067 (2013.01); C23C 14/3407 (2013.01); C23C 14/3492 (2013.01); C23C 14/352 (2013.01); C23C 14/52 (2013.01); G01N 23/2273 (2013.01); H01J 37/3429 (2013.01); H01J 37/3447 (2013.01); H01J 37/345 (2013.01); G01N 2223/6116 (2013.01); H01J 37/3435 (2013.01); H10N 50/10 (2023.02);
Abstract

A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.


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