The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Jun. 27, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Sheng-Tsung Wang, Hsinchu, TW;
Huan-Chieh Su, Changhua County, TW;
Chun-Yuan Chen, Hsinchu, TW;
Lin-Yu Huang, Hsinchu, TW;
Min-Hsuan Lu, Hsinchu, TW;
Chih-Hao Wang, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor device includes followings. A transistor is formed, and the transistor is embedded in a dielectric layer and disposed over a semiconductor substrate. A first gate cutting process is performed to form a first opening in the dielectric layer. An insulator post is formed in the first opening. A second gate cutting process is performed to form a second opening in the dielectric layer. A power via is formed in the second opening. A conductor is formed, wherein the conductor is embedded in the semiconductor substrate, and the conductor is located under and electrically connected to the power via.