The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

May. 21, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yi-Huan Chen, Hsinchu, TW;

Chien-Chih Chou, New Taipei, TW;

Szu-Hsien Liu, Hsinchu County, TW;

Kong-Beng Thei, Hsinchu County, TW;

Huan-Chih Yuan, Hsinchu County, TW;

Jhu-Min Song, Nantou County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/668 (2025.01); H10D 30/0297 (2025.01); H10D 62/115 (2025.01); H10D 64/513 (2025.01);
Abstract

A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes: a substrate; a gate electrode disposed within the substrate; a gate dielectric layer disposed within the substrate and surrounding the gate electrode; a plurality of first protection structures formed in an array disposed over the gate electrode; and a second protection structure comprising a ring shape from a top-view perspective, and disposed over the gate dielectric layer and at a same level as the plurality of first protection structures from a cross-sectional view.


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