The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Jul. 24, 2023
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Meng-Sheng Chang, Chu-bei, TW;
Chia-En Huang, Xinfeng Township, TW;
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Abstract
A memory device is disclosed. The memory device includes a transistor. The memory device includes a resistor electrically coupled to the transistor, the transistor and the resistor forming an electrical fuse (eFuse) memory cell. The memory device includes a plurality of interconnect structures formed over a source/drain structure of the transistor. The memory device includes a plurality of via structures formed over the source/drain structure of the transistor. The resistor is disposed between the source/drain structure of the transistor and a topmost one of the plurality of interconnect structures. The resistor is formed of titanium nitride (TiN).