The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Jun. 21, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chih-Kai Yang, Hsinchu, TW;
Yu-Tien Shen, Hsinchu, TW;
Hsiang-Ming Chang, Hsinchu, TW;
Chun-Yen Chang, Hsinchu, TW;
Ya-Hui Chang, Hsinchu, TW;
Wei-Ting Chien, Hsinchu, TW;
Chia-Cheng Chen, Hsinchu, TW;
Liang-Yin Chen, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); G03F 7/00 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); G03F 7/70058 (2013.01); H01L 21/31144 (2013.01); H01L 21/31155 (2013.01); H01L 21/76877 (2013.01);
Abstract
A semiconductor process system includes an ion source configured to bombard with a photoresist structure on a wafer. The semiconductor process system reduces a width of the photoresist structure by bombarding the photoresist structure with ions in multiple distinct ion bombardment steps having different characteristics.