The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Apr. 14, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Kangguo Cheng, Schenectady, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Julien Frougier, Albany, NY (US);
Heng Wu, Santa Clara, CA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10D 88/00 (2025.01); B82Y 10/00 (2011.01); H10D 30/43 (2025.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10D 84/856 (2025.01); H10D 30/014 (2025.01); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/015 (2025.01); H10D 64/021 (2025.01); H10D 84/0149 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01); H10D 88/01 (2025.01); B82Y 10/00 (2013.01); H10D 30/43 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 64/251 (2025.01); H10D 84/0128 (2025.01); H10D 84/0186 (2025.01);
Abstract
A stacked transistor structure including a top source drain region above a bottom source drain region, wherein a width of the bottom source drain region is greater than a width of the top source drain region, a bottom contact structure directly above and in electrical contact with the bottom source drain region, a replacement spacer surrounding the bottom contact structure, and a top gate spacer separating the replacement spacer from a gate conductor.