The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Feb. 14, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Hung Lin, Taichung, TW;
An-Jhih Su, Taoyuan, TW;
Der-Chyang Yeh, Hsin-Chu, TW;
Shih-Guo Shen, New Taipei, TW;
Chia-Nan Yuan, Hsinchu, TW;
Ming-Shih Yeh, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor device includes the following steps. A semiconductor substrate is provided. A plurality of dielectric layers and a plurality of first conductive features in the dielectric layers are formed on the semiconductor substrate. At least one polymer layer and a plurality of second conductive features in the at least one polymer layer on the dielectric layers are formed. A plurality of conductive connectors are formed to electrically connect to the second conductive features. The semiconductor substrate, the dielectric layers and the at least one polymer layer are cut into a plurality of dies.