The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Nov. 18, 2020
Asml Holding N.v., Veldhoven, NL;
Asml Netherlands B.v., Veldhoven, NL;
Janardan Nath, Norwalk, CT (US);
Christopher John Mason, Newtown, CT (US);
Duan-Fu Stephen Hsu, Fremont, CA (US);
Todd R. Downey, Monroe, CT (US);
Tian Gang, Best, NL;
ASML HOLDING N.V., Veldhoven, NL;
ASML NETHERLANDS B.V., Veldhoven, NL;
Abstract
A method for source mask optimization or mask only optimization used to image a pattern onto a substrate. The method includes determining a non-uniform illumination intensity profile for illumination; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto a substrate substantially match a target design. The non-uniform illumination intensity profile may be determined based on an illumination optical system and projection optics of a lithographic apparatus. In some embodiments, the lithographic apparatus includes a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may include performing optical proximity correction, for example.