The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Mar. 25, 2022
Tokyo Electron Limited, Tokyo, JP;
Takuya Kubo, Tokyo, JP;
Hiroki Maehara, Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
An etching method of etching a wafer by sputtering using ions in plasma includes accommodating the wafer in an internal space of a plasma processing apparatus, and etching a multilayer film by sputtering using ions. The wafer includes a multilayer film containing a non-volatile material and a mask layer on a surface of the multilayer film, and an exposed space of a region not covered by the mask layer. An aspect ratio h/D obtained by dividing a height h of the mask layer by a distance D between two adjacent sidewalls of the mask layer satisfies a condition: h/D≥1/(tan (φ)−tan (θ)). θ indicates an inclination angle of the sidewalls with a vertical surface perpendicular to the surface. φ indicates an upper limit of an incidence angle of ions on the vertical surface. φ is larger than θ.