The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Dec. 17, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); G03F 1/22 (2012.01); G03F 7/095 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76811 (2013.01); G03F 1/22 (2013.01); G03F 7/095 (2013.01); G03F 7/2004 (2013.01); H01L 21/0274 (2013.01); H01L 21/76877 (2013.01);
Abstract
A method for patterning a substrate includes: forming a first photoresist etch mask with an extreme ultraviolet (EUV) lithography process, the first photoresist etch mask including first through openings, the first photoresist etch mask including a metal-based photoresist material; forming a second photoresist etch mask over the first photoresist etch mask, the second photoresist etch mask including second through openings; and forming first openings, through the first and the second photoresist etch masks, in a region of the substrate that vertically overlaps both the first through openings and the second through openings.