The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Sep. 01, 2022
Applicant:

Denso Corporation, Kariya, JP;

Inventors:

Sodai Nomura, Kariya, JP;

Tomoki Kawazu, Kariya, JP;

Bahman Soltani, Kariya, JP;

Yutaro Isshiki, Kariya, JP;

Nobuyuki Nunome, Kariya, JP;

Shiro Okita, Kariya, JP;

Riku Onishi, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B28D 5/00 (2006.01); B23K 26/53 (2014.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
B28D 5/0011 (2013.01); B23K 26/53 (2015.10); B28D 5/0052 (2013.01); B23K 2103/56 (2018.08);
Abstract

A manufacturing method of semiconductor wafers includes preparing a ingot having a first major surface and a second major surface in a back side of the first major surface, a peeling layer being formed in the ingot along the first major surface; and applying a load to the ingot from outside thereof with respect to a surface direction along the first major surface such that a moment with a supporting point which is a first end of the ingot in the surface direction acts on the ingot, thereby peeling a wafer precursor from the ingot. Also, a dynamic force may be applied to the ingot such that a tensile stress along an ingot thickness direction acts on an entire area of the ingot in the surface direction, thereby peeling the wafer precursor from the ingot.


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