The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Jul. 01, 2020
Semes Co., Ltd., Chungcheongnam-do, KR;
Seong Gil Lee, Gyeonggi-do, KR;
Sehoon Oh, Chungcheongnam-do, KR;
Dong Sub Oh, Busan, KR;
Ji-Hwan Lee, Gyeonggi-do, KR;
Dong-Hun Kim, Seoul, KR;
Wan Jae Park, Gyeonggi-do, KR;
SEMES CO., LTD., Chungcheongnam-Do, KR;
Abstract
An apparatus and method for processing a substrate using plasma, which has high plasma stability and process reproducibility, is provided. The method includes providing an apparatus for processing a substrate comprising a plasma generating region and a process region separate from the plasma generating region, placing the substrate including a silicon layer and an oxide layer in the process region, forming a hydrogen atmosphere in the process region by providing a hydrogen-based gas to the process region without passing through the plasma generating region, generating plasma by providing a fluorine-based gas to the plasma generating region, and providing the generated plasma to the process region to selectively remove the silicon layer compared to the oxide layer.