Gyeonggi-do, South Korea

Ji-Hwan Lee

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Semes Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji-Hwan Lee. Retrieved from https://idiyas.com/inventor/ji-hwan-lee-vio48gak

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Ji-Hwan Lee: Innovator in Substrate Processing Technology

Introduction

Ji-Hwan Lee is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of substrate processing, particularly through his innovative methods that enhance plasma stability and process reproducibility.

Latest Patents

Ji-Hwan Lee holds a patent for an "Apparatus and method for processing substrate." This invention involves a sophisticated apparatus designed to process substrates using plasma. The method includes creating a hydrogen atmosphere in the process region and generating plasma to selectively remove silicon layers from oxide layers, showcasing his expertise in advanced material processing.

Career Highlights

Throughout his career, Ji-Hwan Lee has been associated with Semes Co., Ltd., where he has played a crucial role in developing cutting-edge technologies. His work has not only advanced the company's capabilities but has also contributed to the broader field of semiconductor manufacturing.

Collaborations

Ji-Hwan Lee has collaborated with notable colleagues, including Seong Gil Lee and Sehoon Oh. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Ji-Hwan Lee's contributions to substrate processing technology exemplify his commitment to innovation and excellence in the field. His patent and collaborative efforts continue to influence advancements in semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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