The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Dec. 29, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jeffrey S. McNeil, Nampa, ID (US);

Kishore Kumar Muchherla, Fremont, CA (US);

Sivagnanam Parthasarathy, Carlsbad, CA (US);

Patrick R. Khayat, San Diego, CA (US);

Sundararajan Sankaranarayanan, Fremont, CA (US);

Jeremy Binfet, Boise, ID (US);

Akira Goda, Setagaya, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0659 (2013.01); G06F 3/0619 (2013.01); G06F 3/0673 (2013.01); G11C 16/26 (2013.01); G11C 16/0483 (2013.01);
Abstract

A system can include a memory device and a processing device, operatively coupled with the memory device, to perform operations including reading a first copy of data stored in a first set of memory cells comprising a first memory cell, determining whether a threshold voltage of the first memory cell is within a first range of threshold voltages, responsive to determining that the threshold voltage of the first memory cell is within the first range of threshold voltages, reading a second copy of the data stored in a second set of memory cells comprising a second memory cell, determining whether a threshold voltage of the second memory cell is within a second range of threshold voltages, and responsive to determining that the threshold voltage of the second memory cell is outside the second range, using the second copy of the data.


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