The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Feb. 16, 2021
Applicants:

Hoya Corporation, Tokyo, JP;

Tekscend Photomask Corp., Tokyo, JP;

Inventors:

Hitoshi Maeda, Tokyo, JP;

Kazutake Taniguchi, Tokyo, JP;

Kazuaki Matsui, Tokyo, JP;

Naoto Yonemaru, Tokyo, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/32 (2012.01); G03F 1/50 (2012.01); G03F 1/54 (2012.01); G03F 1/80 (2012.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
G03F 1/32 (2013.01); G03F 1/50 (2013.01); G03F 1/54 (2013.01); G03F 1/80 (2013.01); H01L 21/3065 (2013.01);
Abstract

A mask blank has a structure where a thin film for pattern formation and a hard mask film are stacked in this order on a transparent substrate, featured in that the thin film is formed of a material containing chromium, the hard mask film includes a stacked structure of a lower layer and an upper layer, the lower layer is formed of a material containing silicon and oxygen, the upper layer is formed of a material containing tantalum and oxygen with an oxygen content of 30 atom % or more, and the ratio of a thickness of the upper layer relative to a total thickness of the hard mask film is 0.7 or less.


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