The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Oct. 31, 2022
International Business Machines Corporation, Armonk, NY (US);
Julien Frougier, Albany, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Chanro Park, Clifton Park, NY (US);
Andrew Gaul, Halfmoon, NY (US);
Min Gyu Sung, Latham, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A semiconductor device includes a field effect transistor (FET) with at least one Gate-All-Around (GAA) channel. A first conductive ferromagnetic Source/Drain contact is electrically connected with a first portion of the GAA channel. A second conductive ferromagnetic Source/Drain contact is electrically connected with a second portion of the GAA channel. A remanent magnetization of the first conductive ferromagnetic contact is oriented in a direction opposite to a remanent magnetization of the second conductive ferromagnetic contact.