The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Mar. 27, 2023
Applicant:
Anhui University, Hefei, CN;
Inventors:
Assignee:
ANHUI UNIVERSITY, Hefei, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B23K 20/02 (2006.01); C04B 37/00 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/80 (2013.01); B23K 20/023 (2013.01); C04B 37/006 (2013.01); C04B 2237/124 (2013.01); C04B 2237/52 (2013.01); H01L 2224/80011 (2013.01); H01L 2224/80075 (2013.01); H01L 2224/80095 (2013.01); H01L 2224/80203 (2013.01); H01L 2224/80895 (2013.01);
Abstract
The present disclosure belongs to the technical field of three-dimensional packaging, and in particular relates to a bonding method for a copper-copper metal. The bonding method includes: subjecting a copper-plated surface of a clean copper-plated substrate to pretreatment with hydrazine hydrate under a protective atmosphere, to obtain a copper-plated substrate to be bonded, where the copper-plated surface is kept at 50° C. to 90° C.; and subjecting a plurality of the copper-plated substrates to be bonded to pressurized bonding at 200° ° C. to 300° ° C. under the protective atmosphere.