The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Jan. 24, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chuei-Tang Wang, Taichung, TW;

Chun-Lin Lu, Hsinchu, TW;

Kai-Chiang Wu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/66 (2006.01); H01Q 1/22 (2006.01); H01Q 9/04 (2006.01); H01Q 9/16 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/49827 (2013.01); H01L 23/66 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01Q 1/2283 (2013.01); H01Q 9/0407 (2013.01); H01Q 9/16 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68372 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/83005 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A package structure includes a conductive feature structure, a die, an adhesive layer, an insulator, a through via, and an encapsulant. The die is disposed over the conductive feature structure. The adhesive layer is disposed below the die. The insulator is disposed between the adhesive layer and a polymer layer of the conductive feature structure. The through via extends through the insulator to connect to the conductive feature structure. The encapsulant is disposed on the insulator and the conductive feature structure, laterally encapsulating the die and the through via, and between the through via and the insulator. The insulator has a coefficient of thermal expansion less than a coefficient of thermal expansion of the encapsulant.


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