The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Feb. 01, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Katie Lutker-Lee, Albany, NY (US);

Angelique Raley, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 22/20 (2013.01);
Abstract

A method of processing a substrate that includes: forming a first plurality of lines and a first plurality of recesses, each of the plurality of lines being separated from an adjacent one of the plurality of lines by one of the plurality of recesses, the first plurality of lines including a first material and formed over a to-be-patterned layer; performing a cyclic process including: depositing a mask material over the first plurality of lines and within the first plurality of recesses, the mask material deposited defining a second plurality of lines, each of the second plurality of lines dividing one of the first plurality of recesses to form a second plurality of recesses; and performing a trimming process to increase critical dimensions of the second plurality of recesses; and patterning the to-be-patterned layer using the first plurality of lines and the second plurality of lines as an etch mask.


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