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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12321680 B1

PDFFull Text
Date of Patent:
Jun. 03, 2025

Filed:

Nov. 22, 2023

Integrated circuit fin structure

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Po-Hsiang Huang, Hsinchu, TW;

Fong-Yuan Chang, Hsinchu, TW;

Clement Hsingjen Wann, Hsinchu, TW;

Chih-Hsin Ko, Hsinchu, TW;

Sheng-Hsiung Chen, Hsinchu, TW;

Li-Chun Tien, Hsinchu, TW;

Chia-Ming Hsu, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Ly D Pham

Int. Cl.
CPC ...
G06F 30/3312 (2020.01); G06F 30/367 (2020.01); G06F 30/392 (2020.01); G06F 30/398 (2020.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); G06F 111/20 (2020.01);
U.S. Cl.
CPC ...
G06F 30/392 (2020.01); G06F 30/3312 (2020.01); G06F 30/367 (2020.01); G06F 30/398 (2020.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01); G06F 2111/20 (2020.01);
Abstract

An IC device includes first through third rows of fin field-effect transistors (FinFETs), wherein the second row is between and adjacent to each of the first and third rows, the FinFETs of the first row are one of an n-type or p-type, the FinFETs of the second and third rows are the other of the n-type or p-type, the FinFETs of the first and third rows include a first total number of fins, and the FinFETs of the second row include a second total number of fins one greater or fewer than the first total number of fins.

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