The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Oct. 17, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Min Gyu Sung, Latham, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Julien Frougier, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Chanro Park, Clifton Park, NY (US);

Soon-Cheon Seo, Glenmont, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/30 (2023.02); H10B 63/80 (2023.02);
Abstract

A semiconductor structure comprises a first transistor, a second transistor vertically stacked over the first transistor, a source/drain region shared between the first transistor and the second transistor, and a resistive random-access memory device connected to the shared source/drain region.


Find Patent Forward Citations

Sung, Min. (2025). Resistive random-access memory structures with stacked transistors (U.S. Patent No. 12317514). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12317514

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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