The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Apr. 25, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tsung-Fu Tsai, Changhua County, TW;

Hou-Ju Huang, Hsinchu County, TW;

Shih-Ting Lin, Taipei, TW;

Szu-Wei Lu, Hsinchu, TW;

Hung-Wei Tsai, Changhua County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/29 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53204 (2013.01); H01L 21/4857 (2013.01); H01L 21/56 (2013.01); H01L 23/29 (2013.01); H01L 23/5383 (2013.01);
Abstract

A semiconductor device includes a semiconductor die and a conductive structure disposed side-by-side and spaced apart from each other through an insulating encapsulant. The conductive structure includes a first conductor laterally covered by the insulating encapsulant, and a second conductor disposed over and separating from the first conductor. The second conductor includes a first portion laterally covered by the insulating encapsulant and a second portion protruded from the insulating encapsulant, where a ratio of a first standoff height of the first portion and a second standoff height of the second portion ranges from about 0.4 to about 1.5.


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