The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Apr. 20, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Zeqiong Zhao, Santa Clara, CA (US);

Allison Yau, Mountain View, CA (US);

Sang-Jin Kim, San Jose, CA (US);

Akhil Singhal, Portland, OR (US);

Zhijun Jiang, San Jose, CA (US);

Deenesh Padhi, Sunnyvale, CA (US);

Ganesh Balasubramanian, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/40 (2006.01); C23C 16/46 (2006.01); C23C 16/50 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); C23C 16/24 (2013.01); C23C 16/401 (2013.01); C23C 16/46 (2013.01); C23C 16/50 (2013.01); C23C 16/56 (2013.01); H01J 37/32449 (2013.01); H01L 21/02164 (2013.01); H01L 21/02592 (2013.01); H01L 21/0262 (2013.01); H01L 21/02664 (2013.01); H01J 2237/332 (2013.01);
Abstract

Exemplary deposition methods may include delivering a silicon-containing precursor and an inert gas to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the inert gas. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-containing material on a substrate disposed within the processing region of the semiconductor processing chamber. The processing region may be maintained free of helium delivery during the deposition method.


Find Patent Forward Citations

Loading…