The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Sep. 24, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kan-Ju Lin, Kaohsiung, TW;
Chien Chang, Hsinchu, TW;
Chih-Shiun Chou, Hsinchu, TW;
TaiMin Chang, Taipei, TW;
Hung-Yi Huang, Hsinchu, TW;
Chih-Wei Chang, Hsinchu, TW;
Ming-Hsing Tsai, Chu-Pei, TW;
Lin-Yu Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a gate structure on a semiconductor fin, a dielectric layer on the gate structure, and a gate contact extending through the dielectric layer to the gate structure. The gate contact includes a first conductive material on the gate structure, a top surface of the first conductive material extending between sidewalls of the dielectric layer, and a second conductive material on the top surface of the first conductive material.