The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

May. 02, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tz-Jun Kuo, Hsinchu, TW;

Chien-Hsin Ho, Taichung, TW;

Ming-Han Lee, Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/76844 (2013.01); H01L 21/76846 (2013.01); H01L 21/76847 (2013.01); H01L 21/76867 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 23/5329 (2013.01); H01L 23/53223 (2013.01); H01L 23/53252 (2013.01);
Abstract

Embodiments and methods of an interconnect structure are provided. The interconnect structure includes a via, a trench that has an overlapping area with a top of the via, and a first layer of conducting material that has an overlapping area with a bottom of the via. The interconnect also includes a second layer of conducting material formed in the via, and a third layer of conducting material formed in the trench. The second layer of conducting material is in contact with the first layer of conducting material without a barrier in between the two conducting materials. The absence of the barrier at the bottom of the via can reduce the contact resistance of the interconnect structure.


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