The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Feb. 16, 2021
Globalwafers Japan Co., Ltd., Niigata, JP;
Takeshi Senda, Niigata, JP;
Shingo Narimatsu, Niigata, JP;
GLOBALWAFERS JAPAN CO., LTD., Niigata, JP;
Abstract
The substrate is doped with P, has a resistivity adjusted to 1.05 mΩ·cm or less, and includes defects, formed in the crystal by the aggregation of P, which are Si—P crystal defects substantially. The method includes a step of forming a silicon oxide film on the backside of the substrate with a thickness of 300 nm or more and 700 nm or less, a step of mirror-polishing the substrate, and after the mirror-polishing step, a heat treatment step of the substrate mounted on a substrate holder made of Si or SiC, on the holder surface a silicon oxide film is formed with the thickness between 200 nm and 500 nm, wherein the thickness X of the silicon oxide film of the holder and the thickness Y of that on the backside of the substrate satisfy a relational expression Y=C−X, where C is a constant between 800 and 1000.