The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Jan. 17, 2025
Applicants:

Nanjing University of Aeronautics and Astronautics, Jiangsu, CN;

Suzhou Research Institute of Nanjing University of Aeronautics and Astronautic, Jiangsu, CN;

Inventors:

Kai Meng, Nanjing, CN;

Junquan Zhou, Nanjing, CN;

Hangying Zhang, Nanjing, CN;

Chao Meng, Nanjing, CN;

Peihuang Lou, Suzhou, CN;

Xiaoming Qian, Nanjing, CN;

Xing Wu, Nanjing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06T 7/00 (2017.01); G06T 7/13 (2017.01); G06T 7/155 (2017.01); G06T 15/50 (2011.01); G06T 17/00 (2006.01);
U.S. Cl.
CPC ...
G06T 7/001 (2013.01); G06T 7/13 (2017.01); G06T 7/155 (2017.01); G06T 15/506 (2013.01); G06T 17/00 (2013.01); G06T 2207/20036 (2013.01); G06T 2207/20081 (2013.01); G06T 2207/30148 (2013.01);
Abstract

The embodiments of the present disclosure provide a method for an image simulation generation based on a near-field simulation of a computational electromagnetic field, the method comprising: constructing a simulated three-dimensional model based on model parameters; constructing a simulated Kohler illumination model based on a light source parameter; using a degree of similarity change in a synthesized image under incremental aperture diaphragm sampling points as a criterion for approximate convergence of the simulation to determine a count of samples to be used for a balancing combination of simulation cost and accuracy; an optical simulation is performed based on the simulated three-dimensional model and the simulated Kohler illumination model, and a far-field electromagnetic field distribution data is obtained to obtain a simulated image by synthesizing the image. In the generation of a large count of simulated images on the basis of pseudo-random defect dataset generation may be further realized, in the acquisition of a large count of datasets, the dataset of defect inspection model may be trained, in order to achieve a direct detection for patterned wafer defective images and solve the problem of difficult access to reference images in a process of patterned wafer defect detection.


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