The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Aug. 13, 2020
Applicant:

Dnf Co., Ltd., Daejeon, KR;

Inventors:

Se Jin Jang, Jeju-si, KR;

Sung Gi Kim, Daejeon, KR;

Jeong Joo Park, Daejeon, KR;

Tae Seok Byun, Daejeon, KR;

Yong Hee Kwone, Cheongju-si, KR;

Yeong Hun Kim, Daejeon, KR;

Haengdon Lim, Daejeon, KR;

Sang Yong Jeon, Sejong-si, KR;

Sang Ick Lee, Daejeon, KR;

Assignee:

DNF CO., LTD., Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07F 7/21 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C07F 7/21 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01);
Abstract

Provided is a novel silylcyclodisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing the silicon-containing thin film using the same, and since the silylcyclodisilazane compound of the present disclosure has high reactivity, thermal stability and high volatility, it can be used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film by various deposition methods.


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