The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Jan. 04, 2022
Three-dimensional memory device with divided drain select gate lines and method for forming the same
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Di Wang, Wuhan, CN;
Yan Gu, Wuhan, CN;
Zhiliang Xia, Wuhan, CN;
Wenxi Zhou, Wuhan, CN;
Zongliang Huo, Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/20 (2023.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01); H10D 64/66 (2025.01);
U.S. Cl.
CPC ...
H10B 43/20 (2023.02); H10D 30/696 (2025.01); H10D 64/037 (2025.01); H10D 64/679 (2025.01);
Abstract
A memory device includes a stack structure over a substrate, a channel structure extending in the stack structure, and a dielectric layer over the channel structure. The dielectric layer includes a first material. The memory device may also include a drain-select gate (DSG) cut structure extending through the dielectric layer. The DSG cut structure includes a second material different from the first material.