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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12300698 B1

PDFFull Text
Date of Patent:
May. 13, 2025

Filed:

Jul. 19, 2023

Isolation structure for preventing unintentional merging of epitaxially grown source/drain

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Ta-Chun Lin, Hsinchu, TW;

Kuan-Lin Yeh, Hsinchu, TW;

Chun-Jun Lin, Hsinchu, TW;

Kuo-Hua Pan, Hsinchu, TW;

Mu-Chi Chiang, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

HAYNES AND BOONE, LLP

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Adam S Bowen

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/762 (2013.01); H01L 21/76831 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 21/823878 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H10B 10/12 (2023.02);
Abstract

A semiconductor device includes a first active region and a second active region disposed over a substrate. A first source/drain component is grown on the first active region. A second source/drain component is grown on the second active region. An interlayer dielectric (ILD) is disposed around the first source/drain component and the second source/drain component. An isolation structure extends vertically through the ILD. The isolation structure separates the first source/drain component from the second source/drain component.

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