The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Jul. 20, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tai-I Yang, Hsinchu, TW;

Wei-Chen Chu, Taichung, TW;

Yung-Hsu Wu, Taipei, TW;

Chung-Ju Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76867 (2013.01); H01L 21/76879 (2013.01); H01L 23/5222 (2013.01); H01L 23/5283 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01); H01L 23/53209 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a conductive line over the semiconductor substrate. The conductive line has a barrier region surrounding an inner portion of the conductive line, and the barrier region has a greater dopant concentration than the inner portion. The semiconductor device structure also includes a conductive via on the conductive line. The semiconductor device structure further includes a dielectric layer over the semiconductor substrate. The dielectric layer surrounds the conductive line and the conductive via.


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