The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

May. 02, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chen-Hua Yu, Hsinchu, TW;

Chuei-Tang Wang, Taichung, TW;

Shih-Chang Ku, Taipei, TW;

Chien-Yuan Huang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/433 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/4334 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); H01L 25/105 (2013.01); H01L 2224/08148 (2013.01); H01L 2224/08221 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06589 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1058 (2013.01); H01L 2225/1094 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/182 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/3512 (2013.01); H01L 2924/37001 (2013.01);
Abstract

A device includes a first semiconductor device including a first bonding layer; a second semiconductor device bonded to the first bonding layer of the first semiconductor device; thermal structures disposed beside the second semiconductor device and on the first bonding layer, wherein the thermal structures include a conductive material, wherein the thermal structures are electrically isolated from the first semiconductor device and from the second semiconductor device; an encapsulant disposed on the first bonding layer, wherein the encapsulant surrounds the second semiconductor device and surrounds the thermal structures; and a second bonding layer disposed over the encapsulant, the thermal structures, and the second semiconductor device.


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