The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

May. 23, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chen-Hua Yu, Hsinchu, TW;

Chih-Hang Tung, Hsinchu, TW;

Kuo-Chung Yee, Taoyuan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2022.12); H01L 21/56 (2005.12); H01L 23/00 (2005.12); H01L 23/31 (2005.12); H01L 23/48 (2005.12); H01L 23/498 (2005.12); H01L 25/00 (2005.12); H01L 21/48 (2005.12); H01L 23/538 (2005.12); H01L 25/10 (2005.12);
U.S. Cl.
CPC ...
H01L 25/0657 (2012.12); H01L 21/56 (2012.12); H01L 21/568 (2012.12); H01L 23/3128 (2012.12); H01L 23/481 (2012.12); H01L 23/49827 (2012.12); H01L 24/05 (2012.12); H01L 24/09 (2012.12); H01L 24/13 (2012.12); H01L 24/14 (2012.12); H01L 24/16 (2012.12); H01L 24/17 (2012.12); H01L 24/32 (2012.12); H01L 24/49 (2012.12); H01L 24/73 (2012.12); H01L 24/91 (2012.12); H01L 24/92 (2012.12); H01L 25/50 (2012.12); H01L 21/486 (2012.12); H01L 23/49816 (2012.12); H01L 23/5389 (2012.12); H01L 24/29 (2012.12); H01L 24/80 (2012.12); H01L 24/81 (2012.12); H01L 24/83 (2012.12); H01L 25/105 (2012.12); H01L 2224/02331 (2012.12); H01L 2224/0401 (2012.12); H01L 2224/04105 (2012.12); H01L 2224/05005 (2012.12); H01L 2224/05023 (2012.12); H01L 2224/05025 (2012.12); H01L 2224/05026 (2012.12); H01L 2224/0508 (2012.12); H01L 2224/05111 (2012.12); H01L 2224/05124 (2012.12); H01L 2224/05139 (2012.12); H01L 2224/05144 (2012.12); H01L 2224/05147 (2012.12); H01L 2224/05164 (2012.12); H01L 2224/05558 (2012.12); H01L 2224/05568 (2012.12); H01L 2224/05571 (2012.12); H01L 2224/05573 (2012.12); H01L 2224/0558 (2012.12); H01L 2224/056 (2012.12); H01L 2224/05624 (2012.12); H01L 2224/05647 (2012.12); H01L 2224/05655 (2012.12); H01L 2224/05686 (2012.12); H01L 2224/06102 (2012.12); H01L 2224/06181 (2012.12); H01L 2224/08111 (2012.12); H01L 2224/08145 (2012.12); H01L 2224/12105 (2012.12); H01L 2224/13007 (2012.12); H01L 2224/13021 (2012.12); H01L 2224/13025 (2012.12); H01L 2224/13082 (2012.12); H01L 2224/13111 (2012.12); H01L 2224/13124 (2012.12); H01L 2224/13139 (2012.12); H01L 2224/13144 (2012.12); H01L 2224/13147 (2012.12); H01L 2224/13155 (2012.12); H01L 2224/13164 (2012.12); H01L 2224/16058 (2012.12); H01L 2224/16111 (2012.12); H01L 2224/16147 (2012.12); H01L 2224/16148 (2012.12); H01L 2224/1703 (2012.12); H01L 2224/17051 (2012.12); H01L 2224/171 (2012.12); H01L 2224/17181 (2012.12); H01L 2224/27416 (2012.12); H01L 2224/27436 (2012.12); H01L 2224/2919 (2012.12); H01L 2224/32145 (2012.12); H01L 2224/48229 (2012.12); H01L 2224/73103 (2012.12); H01L 2224/73203 (2012.12); H01L 2224/80896 (2012.12); H01L 2224/80907 (2012.12); H01L 2224/81191 (2012.12); H01L 2224/81203 (2012.12); H01L 2224/81815 (2012.12); H01L 2224/83193 (2012.12); H01L 2224/8385 (2012.12); H01L 2224/9205 (2012.12); H01L 2224/9211 (2012.12); H01L 2224/9212 (2012.12); H01L 2224/94 (2012.12); H01L 2225/1058 (2012.12); H01L 2924/00014 (2012.12); H01L 2924/01013 (2012.12); H01L 2924/01029 (2012.12); H01L 2924/15311 (2012.12);
Abstract

In an embodiment, a package includes a first package structure including a first die having a first active side and a first back-side, the first active side including a first bond pad and a first insulating layer a second die bonded to the first die, the second die having a second active side and a second back-side, the second active side including a second bond pad and a second insulating layer, the second active side of the second die facing the first active side of the first die, the second insulating layer being bonded to the first insulating layer through dielectric-to-dielectric bonds, and a conductive bonding material bonded to the first bond pad and the second bond pad, the conductive bonding material having a reflow temperature lower than reflow temperatures of the first and second bond pads.


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