The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Feb. 13, 2020
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Lee Peng Chua, Beaverton, OR (US);

Defu Liang, Wilsonville, OR (US);

Jacob Kurtis Blickensderfer, Tualatin, OR (US);

Thomas A Ponnuswamy, Sherwood, OR (US);

Bryan L. Buckalew, Tualatin, OR (US);

Steven T. Mayer, Aurora, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2005.12); C25D 3/48 (2005.12); C25D 5/02 (2005.12); C25D 7/12 (2005.12); C25D 17/06 (2005.12); H01L 21/311 (2005.12); H01L 23/48 (2005.12);
U.S. Cl.
CPC ...
H01L 21/76873 (2012.12); C25D 3/48 (2012.12); C25D 5/022 (2012.12); C25D 7/123 (2012.12); C25D 17/06 (2012.12); H01L 21/31144 (2012.12); H01L 21/76877 (2012.12); H01L 21/76898 (2012.12); H01L 23/481 (2012.12);
Abstract

Systems and methods are provided for method for etch assisted gold (Au) through silicon mask plating (EAG-TSM). An example method comprises providing a seed layer on a substrate and providing a silicon mask on at least a portion of the seed layer on the substrate. The silicon mask includes one or more via to be filled with Au. The masked substrate is subjected to at least one processing cycle, each processing cycle including an Au plating sub-step and an etch treatment sub-step. The cycles are repeated until a selected via fill thickness is achieved.


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