The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Jun. 02, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuei-Yu Kao, Hsinchu, TW;
Shih-Yao Lin, New Taipei, TW;
Chen-Ping Chen, Yilan, TW;
Chih-Chung Chiu, Hsinchu, TW;
Ke-Chia Tseng, Hsinchu, TW;
Chih-Han Lin, Hsinchu, TW;
Ming-Ching Chang, Hsinchu, TW;
Chao-Cheng Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A cyclic process including an etching process, a passivation process, and a pumping out process is provided to prevent over etching of the sacrificial gate electrode, particularly when near a high-k dielectric feature. The cyclic process solves the problems of failed gate electrode layer at an end of channel region and enlarges filling windows for replacement gate structures, thus improving channel control. Compared to state-of-art solutions, embodiments of the present disclosure also enlarge volume of source/drain regions, thus improving device performance.