The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Sep. 10, 2021
Massachusetts Institute of Technology, Cambridge, MA (US);
The Regents of the University of California, Oakland, CA (US);
Deutsches Elektronen-synchrontron Desy, Hamburg, DE;
Marco Turchetti, Cambridge, MA (US);
Mina Bionta, Somerville, MA (US);
Felix Ritzkowsky, Hamburg, DE;
Yujia Yang, Vaud, CH;
Dario Cattozzo Mor, Desenzano del Garda, IT;
William Putnam, Martinez, CA (US);
Franz X. Kaertner, Hamburg, DE;
Karl K. Berggren, Arlington, MA (US);
Phillip Donald Keathley, Natick, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
The Regents of the University of California, Oakland, CA (US);
Deutsches Elektronen-Synchotron DESY, Hamburg, DE;
Abstract
Some aspects are directed to an all-on-chip, optoelectronic device for sampling arbitrary, low-energy, near-infrared waveforms under ambient conditions. This solid-state integrated detector uses optical-field-driven electron emission from resonant nanoantennas to achieve petahertz-level switching speeds by generating on-chip attosecond electron burst. Also disclosed is a cross-correlation technique based on perturbation of local electron field emission rates that allows for the full characterization of arbitrary electric fields down to 1 femtojoule, and/or on the order of 500 kV/m, using plasmonic nanoantennas.