The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Apr. 07, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2005.12); H01L 21/3115 (2005.12); H01L 21/8234 (2005.12); H01L 29/06 (2005.12); H01L 29/417 (2005.12); H01L 29/66 (2005.12); H01L 29/786 (2005.12);
U.S. Cl.
CPC ...
H01L 29/42392 (2012.12); H01L 21/31155 (2012.12); H01L 21/823412 (2012.12); H01L 21/823418 (2012.12); H01L 21/823437 (2012.12); H01L 29/0665 (2012.12); H01L 29/41775 (2012.12); H01L 29/66553 (2012.12); H01L 29/78696 (2012.12);
Abstract
A device includes at least one semiconductor unit which includes a first source/drain portion, a second source/drain portion, at least one nanosheet segment which is disposed to interconnect the first and second source/drain portions, a gate portion disposed around the at least one nanosheet segment, and a first inner spacer portion and a second inner spacer portion which are disposed to separate the gate portion from the first and second source/drain portions, respectively. Each of the first and second inner spacer portions has a carbon-rich region which confronts the gate portion.