The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Feb. 17, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Kuo-Ju Chen, Taichung, TW;

Shih-Hsiang Chiu, New Taipei, TW;

Meng-Han Chou, Hsinchu, TW;

Su-Hao Liu, Jhongpu Township, TW;

Liang-Yin Chen, Hsinchu, TW;

Huicheng Chang, Tainan, TW;

Yee-Chia Yeo, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2005.12); H01L 21/31 (2005.12); H01L 21/3115 (2005.12); H01L 21/768 (2005.12);
U.S. Cl.
CPC ...
H01L 21/76825 (2012.12); H01L 21/31155 (2012.12); H01L 21/76805 (2012.12); H01L 21/76895 (2012.12);
Abstract

Semiconductor devices and methods of manufacturing semiconductor devices are described herein. A method includes implanting neutral elements into a dielectric layer, an etch stop layer, and a metal feature, the dielectric layer being disposed over the etch stop layer and the metal feature being disposed through the dielectric layer and the etch stop layer. The method further includes using a germanium gas as a source for the neutral elements and using a beam current above 6.75 mA to implant the neutral elements.


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