The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Jan. 09, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Sean Kang, Santa Clara, CA (US);
Olivier Luere, Sunnyvale, CA (US);
Kenji Takeshita, Santa Clara, CA (US);
Sanghyuk Choi, Palo Alto, CA (US);
Mengnan Zou, Sunnyvale, CA (US);
Zihao Ding, Fremond, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the present disclosure generally relate to a method for etching a film stack with high selectivity and low etch recipe transition periods. In one embodiment, a method for etching a film stack having stacked pairs of oxide and nitride layers is described. The method includes transferring a substrate having a film stack formed thereon into a processing chamber, providing a first bias voltage to the substrate, etching an oxide layer of the film stack while providing the first bias voltage to the substrate, providing a second bias voltage to the substrate, the second bias voltage greater than the first bias voltage, and etching a nitride layer of the film stack while providing the second bias voltage to the substrate.