The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
May. 06, 2022
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Lei Liu, Hubei, CN;
Yuancheng Yang, Hubei, CN;
Wenxi Zhou, Hubei, CN;
Kun Zhang, Hubei, CN;
Di Wang, Hubei, CN;
Tao Yang, Hubei, CN;
Dongxue Zhao, Hubei, CN;
Zhiliang Xia, Hubei, CN;
Zongliang Huo, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
Embodiments of three-dimensional memory devices and fabricating methods thereof are disclosed. One disclosed method for forming a memory structure comprises: forming a bottom conductive layer on a substrate; forming a dielectric stack on the bottom conductive layer, the dielectric stack comprising a plurality of alternatively arranged first dielectric layers and second dielectric layers; forming an opening penetrating the dielectric stack and exposing the bottom conductive layer; forming a cap layer on a bottom of the opening; forming a cylindrical body and a top contact on the cap layer and in the opening; and replacing the plurality of second dielectric layers with conductive layers.