The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Jun. 17, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kan-Ju Lin, Kaohsiung, TW;
Lin-Yu Huang, Hsinchu, TW;
Min-Hsuan Lu, Hsinchu, TW;
Wei-Yip Loh, Hsinchu, TW;
Hong-Mao Lee, Hsinchu, TW;
Harry Chien, Chandler, AZ (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure describes a buried conductive structure in a semiconductor substrate and a method for forming the structure. The structure includes an epitaxial region disposed on a substrate and adjacent to a nanostructured gate layer and a nanostructured channel layer, a first silicide layer disposed within a top portion of the epitaxial region, and a first conductive structure disposed on a top surface of the first silicide layer. The structure further includes a second silicide layer disposed within a bottom portion of the epitaxial region and a second conductive structure disposed on a bottom surface of the second silicide layer and traversing through the substrate, where the second conductive structure includes a first metal layer in contact with the second silicide layer and a second metal layer in contact with the first metal layer.