logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12266688 B1

PDFFull Text
Date of Patent:
Apr. 01, 2025

Filed:

Jun. 08, 2023

Semiconductor device with source/drain contact formed using bottom-up deposition

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Sung-Li Wang, Hsinchu County, TW;

Mrunal A. Khaderbad, Hsinchu, TW;

Yasutoshi Okuno, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Duy T Nguyen

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 23/535 (2006.01); H01L 27/092 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/0262 (2013.01); H01L 21/28518 (2013.01); H01L 21/76224 (2013.01); H01L 21/76802 (2013.01); H01L 21/76876 (2013.01); H01L 21/76883 (2013.01); H01L 21/76897 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 23/535 (2013.01); H01L 27/0924 (2013.01); H01L 29/165 (2013.01); H01L 29/41725 (2013.01); H01L 29/45 (2013.01); H01L 29/665 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02271 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/31116 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/6656 (2013.01);
Abstract

A semiconductor device includes first and second semiconductor fins extending from a substrate, and first and second epitaxial layers wrapping around the first and second semiconductor fins, respectively. The semiconductor device further includes a contact plug over the first epitaxial layer and the second epitaxial layer. The contact plug includes a first interfacial layer over the first epitaxial layer and a second interfacial layer over the second epitaxial layer. The first and second interfacial layers include a noble metal element and a Group IV element.

Find Patent Forward Citations

Wang, Sung-Li. (2025). Semiconductor device with source/drain contact formed using bottom-up deposition (U.S. Patent No. 12266688). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12266688

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…