The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Jun. 08, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 23/535 (2006.01); H01L 27/092 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/0262 (2013.01); H01L 21/28518 (2013.01); H01L 21/76224 (2013.01); H01L 21/76802 (2013.01); H01L 21/76876 (2013.01); H01L 21/76883 (2013.01); H01L 21/76897 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 23/535 (2013.01); H01L 27/0924 (2013.01); H01L 29/165 (2013.01); H01L 29/41725 (2013.01); H01L 29/45 (2013.01); H01L 29/665 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02271 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/31116 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/6656 (2013.01);
Abstract
A semiconductor device includes first and second semiconductor fins extending from a substrate, and first and second epitaxial layers wrapping around the first and second semiconductor fins, respectively. The semiconductor device further includes a contact plug over the first epitaxial layer and the second epitaxial layer. The contact plug includes a first interfacial layer over the first epitaxial layer and a second interfacial layer over the second epitaxial layer. The first and second interfacial layers include a noble metal element and a Group IV element.