The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Jul. 22, 2022
International Business Machines Corporation, Armonk, NY (US);
Tsung-Sheng Kang, Ballston Lake, NY (US);
Daniel Schmidt, Niskayuna, NY (US);
Alexander Reznicek, Troy, NY (US);
Ruilong Xie, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of present invention provide a method of forming a semiconductor structure. The method includes forming a first set of nanosheets and a second set of nanosheets on top of the first set of nanosheets, wherein the first set of nanosheets has an uppermost nanosheet and the second set of nanosheets has a lowermost nanosheet, the lowermost nanosheet being separated from the uppermost nanosheet by a first gap; forming a conformal liner covering the first set of nanosheets and the first gap; covering a first portion of the conformal liner at the first gap with a protective stud; selectively removing a second portion of the conformal liner from end surfaces of the first set of nanosheets; and forming source/drain at the end surfaces of the first set of nanosheets. A structure formed thereby is also provided.