The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Feb. 07, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Robert D. Clark, Albany, NY (US);

H. Jim Fulford, Albany, NY (US);

Mark I. Gardner, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 29/1033 (2013.01); H01L 29/7851 (2013.01);
Abstract

Methods for the manufacture of semiconductor devices with integrated two-dimensional (2D) materials are disclosed. Aspects can include forming a base structure comprising a seed material with a chemical element; forming source/drain contacts coupled to first and second portions of the base structure, respectively, wherein the source/drain contacts each have at least the chemical element; exposing a third portion of the base structure; selectively growing a 2D material at least coupled to the third portion of the base structure; and forming an active gate coupled to the 2D material.


Find Patent Forward Citations

Loading…