The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Aug. 28, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ya-Yi Tsai, Hsinchu, TW;
Shih-Yao Lin, New Taipei, TW;
Chi-Hsiang Chang, Hsinchu, TW;
Wei-Han Chen, Hsinchu, TW;
Shu-Yuan Ku, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device is described. A substrate is provided. A plurality of fins is formed extending from the substrate, the fins including a first group of active fins arranged in an active region, and including an inactive fin having at least a portion in an inactive region, the active fins separated by first trench regions between adjacent of the active regions, the inactive fin separated from its closest active fin by a second trench region, the second trench region having a greater width than that of a trench region of the first trench regions. A dummy fin is formed on the isolation dielectric in the second trench region, the dummy fin disposed between the first group of active fins and the inactive fin. A dummy gate is formed over the fins. The gate isolation structure is disposed between the dummy fin and the inactive fin and separates regions of the dummy gate.